24 Mar - 9.30 am | Diamond Semiconductor Devices for Future Electronics
By Hitoshi UMEZAWA | 2014 LANEF Chair of Excellence & National Institute of Advanced Industrial Science and Technology, Tsukuba - Japan
REGISTRATION BY EMAIL MANDATORY FOR NON- HOLDER OF A CNRS ACCES BADGE
At 9.30am Lecture room Remy Lemaire K223, 1st floor, Building. K, 25 rue des Martyrs, Grenoble
Diamond is one of the promising materials for future electronic devices because of its excellent material properties such as wide bandgap, high electron/hole mobility, high breakdown field, highest thermal conductivity and so on. Up to now, high performance devices such as high frequency FETs, high voltage/high current devices and high temperature devices with radiation hardness have been reported on single crystal diamond. In this seminar, I will introduce the recent progress on diamond wafer technology and semiconductor devices from the view point of industrial applications.
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