Hitoshi UMEZAWA is working in the Diamond Research Group of the Research Institute of Ubiquitous Energy Devices which is a part of the National Institute of Advanced Industrial Science and Technology (AIST) in Japan.
His project with LANEF, in a partnership between the Néel Institute and the G2Elab, is to develop the next generation of semiconductor devices using the superior material characteristics of diamond.
This project will be carried out using two approaches:
- The development of normally-off type MESFET which is one of the potential device structure for diamond power device because of its simple fabrication process and high current capability. Precise control of doping concentration and thickness of epitaxial film are at the core of this approach.
- The confirmation of 2DHG on MOS/MIS structure and fabrication of E-mode FET