LED made of GaN on silicon nanowires
Founded in 2011, Aledia develops and manufactures innovative light-emitting diodes (LEDs) based on a unique 3D architecture using gallium-nitride (GaN)-on-silicon microwires. The technology uses standard silicon wafers with diameters of 8 inches (200 mm) and existing CMOS wafer-fabrication processes and tools, enabling production of LED chips at 25 percent of the cost of traditional planar LED chips.
Aledia’s game-changing WireLED™ GaN-on-silicon microwire technology, developed at the research laboratories of CEA-LETI and CEA-INAC in France, represents a cost-disruptive solution to the key challenge facing the very large and growing LED market. By resolving the important cost issue, Aledia is working to make LEDs available at substantially lower prices than are found today.